Exciton dephasing in single InGaAs quantum dots

被引：0
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作者：
Leosson, K. [1 ]
Erland, J. [1 ]
Jensen, J.R. [1 ]
Hvam, J.M. [1 ]
机构：
[1] Technical Univ of Denmark, Lyngby, Denmark
来源：
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series | 2000年
关键词：
Electron beam lithography - Electron transitions - Emission spectroscopy - Energy gap - Etching - Excitons - Ground state - Helium neon lasers - Photoluminescence - Semiconducting indium gallium arsenide - Solid state lasers - Thermal effects;
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摘要：
Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due to fast dephasing. The present work investigates the low-temperature homogeneous linewidth of individual photoluminescence lines from molecular beam epitaxy-grown In0.5Ga0.5As/GaAs quantum dots.
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页码：56 / 57
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