QUANTIZATION OF PHOTO-EXCITED CARRIERS IN GaAs DOPING SUPERLATTICES.

被引：0
|
作者：
Zeller, Ch.
Vinter, B.
Abstreiter, G.
Ploog, K.
机构：
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1982年 / 117-118卷 / Pt II期
关键词：
LIGHT - Scattering - RAMAN SCATTERING;
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摘要：
Photo-excited carriers in periodic doping multilayer structures of GaAs are studied using resonant inelastic light scattering techniques. Spin-flip single-particle intersubband excitations clearly demonstrate the quantization of electrons in purely space-charge induced potential wells. With increasing excitation intensity the electric subbands broaden to minibands with considerable dispersion with k perpendicular to the layers. A quasi-three-dimensional behavior is found in both self-consistent calculations and electronic Raman scattering experiments.
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页码：729 / 731
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