Stress effect on current-induced degradation of be-doped AlGaAs/GaAs heterojunction bipolar transistors

被引：0
|
作者：
Mochizuki, Kazuhiro [1 ]
Isomae, Seiichi [1 ]
Masuda, Hiroshi [1 ]
Tanoue, Tomonori [1 ]
Kusano, Chuushiro [1 ]
机构：
[1] Hitachi Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 03期
关键词：
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页码：751 / 756
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