Validity of double and triple Gaussian functions for proximity effect correction in x-ray mask writing

被引:0
|
作者
Mitsubishi Electric Corp, Hyogo, Japan [1 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
18
引用
收藏
相关论文
共 50 条
  • [21] Absorber edge effect in proximity X-ray lithography
    Simon, G
    Chen, Y
    Haghiri-Gosnet, AM
    Decanini, D
    Bourneix, J
    Rousseaux, F
    Launois, H
    MICROELECTRONIC ENGINEERING, 1998, 42 : 297 - 300
  • [22] Magnification correction by changing wafer temperature in proximity x-ray lithography
    Aoyama, H
    Mitsui, S
    Taguchi, T
    Tanaka, Y
    Matsui, Y
    Fukuda, M
    Suzuki, M
    Haga, T
    Morita, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3411 - 3414
  • [23] A new process to fabricate DXRL x-ray mask by direct pattern writing
    Ling, ZG
    Lian, K
    Wen, SR
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY VIII, 2003, 4979 : 501 - 507
  • [24] Proximity effect model for x-ray Transition Edge Sensors
    Harwin, R. C.
    Goldie, D. J.
    Withington, S.
    Khosropanah, P.
    Gottardi, L.
    Gao, J. -R.
    HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY VIII, 2018, 10709
  • [25] Proximity correction simulations in ultra-high resolution x-ray lithography
    Bourdillon, AJ
    Boothroyd, CB
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (22) : 3209 - 3213
  • [26] Characterization of proximity correction in 100-nm-regime X-ray lithography
    Yi, M
    Seo, E
    Seo, Y
    Lee, K
    Kim, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12B): : 6824 - 6829
  • [27] X-ray mask distortion correction technology using pattern displacement simulator
    Uchiyama, S
    Oda, M
    Matsuda, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06): : 4332 - 4335
  • [28] Experimental demonstration of the validity of accelerated radiation damage testing of x-ray mask materials
    Acosta, RE
    Rippstein, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3097 - 3098
  • [29] Mixed proximity/holographic mask technology for 50nm VLSI by x-ray lithography
    Burge, RE
    Knauer, JN
    Yuan, XC
    Powell, K
    EMERGING LITHOGRAPHIC TECHNOLOGIES II, 1998, 3331 : 280 - 290
  • [30] Study of x-ray lithography mask distortion during electron-beam writing
    Shang Hongyan
    Wang Yongkun
    SEVENTH INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION AND CONTROL TECHNOLOGY: OPTOELECTRONIC TECHNOLOGY AND INSTUMENTS, CONTROL THEORY AND AUTOMATION, AND SPACE EXPLORATION, 2008, 7129