ANOMALOUS ADSORPTION HYSTERESIS OF THE PHOTOCONDUCTIVITY OF LEAD SULFIDE FILMS.

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作者：

Il'in, V.I.

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来源：

| 1973年 / 7卷 / 03期

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摘要：

The properties of lead sulfide films are derived as function of the oxygen pressure at room temperature.

引用

页码：453 / 454

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[41] FURTHER INFORMATION ON MECHANISM OF PHOTOCONDUCTIVITY IN CHEMICALLY DEPOSITED LEAD SULFIDE LAYERS
LEE, EH
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JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4259 - &
[42] ANOMALOUS PHOTOVOLTAGES IN LEAD IODIDE FILMS
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[43] PHOTOCONDUCTIVITY IN THIN-FILMS OF LEAD-TELLURIDE
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[44] SLOW RELAXATION OF THE PHOTOCONDUCTIVITY OF LEAD-TELLURIDE FILMS
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[45] PHOTOCONDUCTIVITY IN EVAPORATED TETRAGONAL AND ORTHORHOMBIC LEAD OXIDE FILMS
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1600, (02):
[47] ELECTRICAL INSTABILITY IN FILMS OF LEAD SULFIDE
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[48] DETERMINATION OF OXYGEN IN LEAD SULFIDE FILMS
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[49] INFLUENCE OF LAYER THICKNESS AND GRAIN SIZE OF CHEMICALLY DEPOSITED LEAD SULFIDE FILMS ON LONG-WAVELENGTH LIMIT OF PHOTOCONDUCTIVITY
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[50] Photoconductivity of thin epitaxial lead-selenide films
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