NUMERICAL STUDY OF AN N-GALLIUM ARSENIDE DIODE DISTRIBUTED OSCILLATOR.

被引：0

作者：

Aishima, Asuo ^{[1
]}

Fukushima, Yoshifumi ^{[1
]}

机构：

[1] Department of Electronics Engineering, Hiroshima University, Shitami, Saijohcho, Higashihiroshima 724, Japan

来源：

Journal of Applied Physics | 1984年 / 56卷 / 04期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The dynamic electron velocity, electron temperature, etc. , in an n-gallium arsenide ballistic diode have been calculated by solving the Boltzmann equation under a hydrodynamic approximation. It has been found from the results that an n-gallium arsenide ballistic diode exhibits a negative conductance at a fairly high frequency range and over a wide frequency range from 1500. 0 to 2300. 0 GHz. From the small signal analysis using a simplified diode model, it has been shown that the negative conductance arises as a result of density modulation effects of the carriers, namely, space-charge transit time effects. High growth rate, up to 300. 0 Np/cm, has been predicted in an n-gallium arsenide ballistic diode distributed oscillator. The diode can be expected to act as a new solid-state source at a far infrared frequency range.

引用

页码：1086 / 1092

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