共 50 条
- [21] Valence subband structures and optical properties of strain-compensated quantum wells JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01): : 34 - 39
- [22] BAND OFFSETS IN STRAINED INGAASP/INGAASP QUANTUM-WELL OPTICAL MODULATOR STRUCTURES JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 327 - 330
- [23] GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3μm wavelength lasers COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 63 - 66
- [25] High temperature characteristics of 1.55 μm InGaAs/InGaAsP strain-compensated multiple quantum well lasers SEMICONDUCTOR OPTOELECTRONIC DEVICE MANUFACTURING AND APPLICATIONS, 2001, 4602 : 173 - 177
- [26] Strain and quantum-confinement effects on differential gain of strained InGaAsP/InP quantum well lasers Journal of Applied Physics, 1993, 74 (06):