On the differential gain in coupled quantum wells

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机构：
[1] Wartak, M.S.
[2] Weetman, P.
来源：
Wartak, M.S. (mwartak@wlu.ca) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
Approximation theory - Carrier concentration - Electron scattering - Electron transitions - Energy gap - Poisson equation - Random processes - Wave equations;
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摘要：
The combined self-consistent and well-coupling effects on differential gain in a double quantum well system were analyzed. The analysis was performed for a 1.55 νm InGaAsP/InP lattice-matched system grown in the [001] direction. A 4×4 Luttinger-Kohn (LK) model for the heavy and light holes was used for final gain calculations. The results show that an increase of the density of conduction electrons and the reduction of hole densities modifies the amplitude of the differential gain and the change in relative transition strengths which modifies the spectral dependence.
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