Anti-Stokes luminescence in nitrogen doped GaAs1-xPx alloys

被引：0

作者：

Meftah, A. ^{[1
]}

Oueslati, M. ^{[1
]}

Scalbert, D. ^{[1
]}

机构：

[1] Universite de Tunis II, Belvedere, Tunisia

来源：

EPJ Applied Physics | 1998年 / 1卷 / 01期

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D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：35 / 38

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[21] DONOR STATES IN TE-DOPED GAAS1-XPX
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[22] ELECTRICAL TRANSPORT PROPERTIES OF ZN DOPED GAAS1-XPX
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[23] TEMPERATURE DEPENDENCE OF ELECTROREFLECTANCE SPECTRA IN GAAS1-XPX ALLOYS
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[29] SPONTANEOUS AND STIMULATED EMISSION IN GAAS1-XPX AND IN1-XGAXP DOPED WITH NITROGEN ISOELECTRONIC TRAP
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[30] Optical orientation of excitons on GaAs1-xPx alloys with indirect gap
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