FLOW-RATE MODULATION EPITAXY OF GaAs.

被引：0
|
作者：
Kobayashi, Naoki [1 ]
Makimoto, Toshiki [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT, Musashino, Jpn, NTT, Musashino, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1985年 / 24卷 / 12期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码：962 / 964
相关论文
共 50 条
  • [41] Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy
    Kobayashi, Yasuyuki
    Makimoto, Toshiki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3519 - 3521
  • [42] Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy
    Kobayashi, Yasuyuki
    Makimoto, Toshiki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (4 B): : 3519 - 3521
  • [43] Flat surfaces and interfaces in AlN/GaN heterostructures and superlattices grown by flow-rate modulation epitaxy
    Hiroki, M
    Kobayashi, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2305 - 2308
  • [44] Flat surfaces and interfaces in AlN/GaN heterostructures and superlattices grown by flow-rate modulation epitaxy
    Hiroki, M. (hiroki@will.brl.ntt.co.jp), 1600, Japan Society of Applied Physics (42):
  • [45] Flow-rate modulation epitaxial growth of Zn1-yMgySxSe1-x on GaAs
    Lee, MK
    Pan, SS
    Tsay, BT
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (4B): : L374 - L376
  • [46] INVESTIGATION OF GROWTH-PROCESSES IN FLOW-RATE MODULATION EPITAXY AND ATOMIC LAYER EPITAXY BY NEW INSITU OPTICAL MONITORING METHOD
    KOBAYASHI, N
    MAKIMOTO, T
    YAMAUCHI, Y
    HORIKOSHI, Y
    ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 139 - 145
  • [47] Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrate
    Wang, XL
    Ogura, M
    Matsuhata, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 586 - 590
  • [48] Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy
    Luo, Weike
    Liu, Bin
    Li, Zhonghui
    Yang, Feng
    Li, Zhenhua
    Yang, Qiankun
    Gao, Hanchao
    Wang, Kechao
    Zhang, Rong
    APPLIED PHYSICS EXPRESS, 2020, 13 (01)
  • [49] A GROWTH ANALYSIS FOR METALLORGANIC VAPOR PHASE EPITAXY OF GaAs.
    Doi, Atsutoshi
    Iwai, Sohachi
    Meguro, Takashi
    Namba, Susumu
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (05): : 795 - 800
  • [50] INDIUM-PHOSPHIDE ON GALLIUM-ARSENIDE HETEROEPITAXY WITH INTERFACE LAYER GROWN BY FLOW-RATE MODULATION EPITAXY
    CHEN, WK
    CHEN, JF
    CHEN, JC
    KIM, HM
    ANTHONY, L
    WIE, CR
    LIU, PL
    APPLIED PHYSICS LETTERS, 1989, 55 (08) : 749 - 751
12345