FLOW-RATE MODULATION EPITAXY OF GaAs.

被引：0
|
作者：
Kobayashi, Naoki [1 ]
Makimoto, Toshiki [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT, Musashino, Jpn, NTT, Musashino, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1985年 / 24卷 / 12期
关键词：
D O I：
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学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：962 / 964
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