Behavior of F atoms and CF2 radicals in fluorocarbon plasmas for SiO2/Si etching

被引：0
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作者：
Tachibana, Kunihide [1 ]
Kamisugi, Hideaki [1 ]
Kawasaki, Takeshi [1 ]
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 7 B期
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页码：4367 / 4372
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