Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN

被引：0
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作者：
Seitz, R. [1 ]
Gaspar, C. [1 ]
Monteiro, T. [1 ]
Pereira, E. [1 ]
Leroux, M. [1 ]
Beaumont, B. [1 ]
Gibart, P. [1 ]
机构：
[1] Universidade de Aveiro, Aveiro, Portugal
来源：
Journal of Crystal Growth | / 189-190卷
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页码：546 / 550
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