Theory of carbon complexes in gallium arsenide and aluminum arsenide

被引：0
|
作者：
Jones, R. [1 ]
Oberg, S. [1 ]
机构：
[1] Univ of Exeter, Exeter, United Kingdom
来源：
Materials Science Forum | 1994年 / 143-4卷 / pt 1期
关键词：
Annealing - Arsenic compounds - Carbon - Crystal defects - High temperature effects - Mathematical models - Semiconducting aluminum compounds - Semiconductor doping;
D O I：
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中图分类号：
学科分类号：
摘要：
High temperature annealing of GaxAl(1-x)As:C leads to a reduction in both lattice strain and hole concentration which have been attributed to the creation of a number of defects including Ci. The structure and dynamic properties of two C interstitials as well as acceptor pairs are analyzed using first principles local density functional cluster theory. We find that Ci-CAs defects have properties in common with those formed by high temperature annealing.
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页码：253 / 258
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