Population dynamics of resonantly excited carriers in InAs quantum dots

被引：0
|
作者：
Bonadeo, N.H. [1 ]
Bloch, Jacqueline [1 ]
Birkedal, Dan [1 ]
Shah, Jagdeep [1 ]
Pfeiffer, L.N. [1 ]
West, K.W. [1 ]
机构：
[1] Bell Labs, Holmdel, United States
来源：
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series | 2000年
关键词：
Activation energy - Electronic density of states - Molecular beam epitaxy - Optical parametric oscillators - Photoluminescence - Probes - Relaxation processes - Semiconducting gallium arsenide - Semiconducting indium compounds - Spectroscopy - Thermal effects;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An overview is given on the analysis of the depopulation dynamics of the lowest electronic states following resonant excitation by femtosecond pulse. Results provide the first direct information on the thermal activation rates of carriers in quantum dots.
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页码：39 / 40
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