Other transistor: Early history of the metal-oxide-semiconductor field-effect transistor

被引：0
|
作者：
Coll. of Engineering and Mathematics, University of Vermont, 109 Votey Building, Burlington, VT 05405-0156, United States [1 ]
机构：
来源：
Eng Sci Educ J | / 5卷 / 233-240期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
36
引用
收藏
相关论文
共 50 条
  • [41] Metal-oxide-semiconductor field-effect transistor (MOSFET) ultrafast switching research and its applications
    Togatov, V. V.
    Ternovskii, D. S.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2013, 56 (01) : 59 - 65
  • [42] Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter
    Sridhar, Manoj
    Xu, Dongyan
    Kang, Yuejun
    Hmelo, Anthony B.
    Feldman, Leonard C.
    Li, Dongqing
    Li, Deyu
    Journal of Applied Physics, 2008, 103 (10):
  • [43] Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness
    Daggubati, M.
    Sim, G.
    Long, D.
    Paravi, H.
    Wang, Q.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1289 - 1292
  • [44] Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Croitoru, M.D. (devreese@uia.ua.ac.be), 1600, American Institute of Physics Inc. (93):
  • [45] RESPONSE OF A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO A COSMIC-RAY ION TRACK
    BENUMOF, R
    ZOUTENDYK, J
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2374 - 2380
  • [46] Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Croitoru, MD
    Gladilin, VN
    Fomin, VM
    Devreese, JT
    Magnus, W
    Schoenmaker, W
    Sorée, B
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 1230 - 1240
  • [47] Metal-oxide-semiconductor field-effect transistor (MOSFET) ultrafast switching research and its applications
    V. V. Togatov
    D. S. Ternovskii
    Instruments and Experimental Techniques, 2013, 56 : 59 - 65
  • [48] Analytical Compact Model of Ballistic Cylindrical Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor
    Numata, Tatsuhiro
    Uno, Shigeyasu
    Nakazato, Kazuo
    Kamakura, Yoshinari
    Mori, Nobuya
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [49] Subthreshold Characteristics of a Metal-Oxide-Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance
    Lin, Jing-Jenn
    Tao, Ji-Hua
    Wu, You-Lin
    CRYSTALS, 2019, 9 (12):
  • [50] Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
    Croitoru, MD
    Gladilin, VN
    Fomin, VM
    Devreese, JT
    Magnus, W
    Schoenmaker, W
    Sorée, B
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) : 2305 - 2310
12345