INSPECTION SYSTEM FOR PARTICULATE AND DEFECT DETECTION ON PRODUCT WAFERS.

被引:0
|
作者
Anon
机构
来源
IBM technical disclosure bulletin | 1985年 / 27卷 / 12期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6971 / 6973
相关论文
共 50 条
  • [1] AUTOMATED DEFECT DETECTION ON PATTERNED WAFERS.
    Powell Billat, Susan
    Semiconductor International, 1987, 10 (06) : 116 - 119
  • [2] AUTOMATING THE INSPECTION PROCESS FOR RETICLES, MASKS AND WAFERS.
    Awamura, Daikichi
    JEE, Journal of Electronic Engineering, 1983, 20 (201): : 64 - 68
  • [3] INFLUENCE OF CARBON ON THE DEFECT GENERATION IN IG SILICON WAFERS.
    Tan, Songsheng
    Shen, Jinyuan
    Li, Yuezhen
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (05): : 489 - 496
  • [4] Shape Defect Detection for Product Quality Inspection and Monitoring System
    Saad, Norhashimah Mohd
    Rahman, Nor Nabilah Syazana Abdul
    Abdullah, Abdul Rahim
    Wahab, Farhan Abdul
    2017 4TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTER SCIENCE AND INFORMATICS (EECSI), 2017, : 192 - 197
  • [5] THERMAL WAVE IMPLANT DOSIMETRY FOR PROCESS CONTROL ON PRODUCT WAFERS.
    Wendman, Mark A.
    Smith, W.Lee
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 559 - 562
  • [6] ELECTROCHEMICAL METHOD TO MEASURE THE DEFECT-FREE ZONE IN SILICON WAFERS.
    Cazcarra, V.
    Garroux, D.
    IBM technical disclosure bulletin, 1983, 26 (05): : 2374 - 2376
  • [7] Defect inspection of wafers by laser scattering
    Takami, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 181 - 187
  • [8] Defect inspection of wafers by laser scattering
    Takami, Katsumi
    Materials science & engineering. B, Solid-state materials for advanced technology, 1997, B44 (1-3): : 181 - 187
  • [9] Application of the SEMSpec electron-beam inspection system to in-process defect detection on semiconductor wafers
    Cass, TR
    Hendricks, D
    Jau, J
    Dohse, HJ
    Brodie, AD
    Meisburger, WD
    MICROELECTRONIC ENGINEERING, 1996, 30 (1-4) : 567 - 570
  • [10] EXTENDED-DEFECT REDUCTION BY UNIFORM HEATING FOR P + -IMPLANTED Si WAFERS.
    Komatsu, Ryosaku
    Kajiyama, Kenji
    1600, (54):