INVESTIGATION OF S-TYPE DIODE NEURISTORS.

An analysis is made of the coupling mechanism in semidistributed neuristors formed by chains of diode structures with S-type porward current-voltage characteristics. It is assumed that the time needed to switch an active element to the conducting state is considerably shorter than the delay time between switching of consecutive elements. Two types of neuristor are considered: a neuristor with a drift field, in which the coupling is due to carrier drift and diffusion; a neuristor with a repulsive field, in which the coupling is due to carrier diffusion against the field. It is shown that the delay time of neuristors of the first type is independent of the bias voltage and of the scatter of the diode parameters. The results of calculations are verified by a study of neuristors prepared from gold-doped germanium.