INVESTIGATION OF S-TYPE DIODE NEURISTORS.

被引：0
|
作者：
Kozlov, N.P.
Levashov, I.P.
Murygin, V.I.
Popov, L.V.
Sondaevskaya, I.A.
Stafeev, V.I.
机构：
来源：
| 1972年 / 6卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
An analysis is made of the coupling mechanism in semidistributed neuristors formed by chains of diode structures with S-type porward current-voltage characteristics. It is assumed that the time needed to switch an active element to the conducting state is considerably shorter than the delay time between switching of consecutive elements. Two types of neuristor are considered: a neuristor with a drift field, in which the coupling is due to carrier drift and diffusion; a neuristor with a repulsive field, in which the coupling is due to carrier diffusion against the field. It is shown that the delay time of neuristors of the first type is independent of the bias voltage and of the scatter of the diode parameters. The results of calculations are verified by a study of neuristors prepared from gold-doped germanium.
引用
收藏
页码：918 / 923
相关论文
共 50 条
  • [1] INVESTIGATION OF S-TYPE DIODE NEURISTORS
    KOZLOV, NP
    MURYGIN, VI
    STAFEEV, VI
    SONDAEVS.IA
    LEVASHOV, IP
    POPOV, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 918 - &
  • [2] SHUNTING MECHANISM OF COUPLING IN S-TYPE DIODE NEURISTORS
    LEVASHOV, IP
    MURYGIN, VI
    POPOV, LV
    SAFRONOV, EL
    SONDAEVS.IA
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (04): : 589 - &
  • [3] ELECTROLUMINESCENT S-TYPE DIODE AS AN ELEMENT OF AN OPTRON PAIR
    ALFEROV, ZI
    KOROLKOV, VI
    STEPANOV.MN
    NIKITIN, VG
    TRETYAKO.DN
    YAKOVENK.AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 509 - &
  • [4] INVESTIGATION OF GALLIUM-PHOSPHIDE S-TYPE DIODES
    ANISIMOV.ID
    KOGAN, LM
    RUDOVOL, TV
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 887 - 889
  • [5] INVESTIGATION OF TRANSIENT PROCESSES IN PHOTOSENSITIVE S-TYPE DIODES
    LEBEDEV, AA
    MAMADALI.AT
    SULTANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 195 - 198
  • [6] INVESTIGATION OF TRANSIENT PROCESSES IN PHOTOSENSITIVE S-TYPE DIODES.
    Lebedev, A.A.
    Mamadalimov, A.T.
    Sultanov, N.A.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 195 - 198
  • [7] NUMERICAL INVESTIGATION OF PULSATILE FLOW IN AN S-TYPE BYPASS GRAFT
    Jiang, Wentao
    Zheng, Tinghui
    Chen, Junkai
    Deng, Xiaoyan
    Fan, Yubo
    JOURNAL OF MECHANICS IN MEDICINE AND BIOLOGY, 2012, 12 (01)
  • [8] Decoupled Ca and Fe plus Mg content of S-type granites: An investigation on the factors that control the Ca budget of S-type granites
    Garcia-Arias, Marcos
    LITHOS, 2018, 318 : 30 - 46
  • [9] S-TYPE CURRENT-VOLTAGE CHARACTERISTIC OF A GUNN DIODE WITH DEEP CENTERS (THEORY)
    GELMONT, BL
    SHUR, MS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 50 - 54
  • [10] INVESTIGATION OF S-TYPE DIODES MADE OF PALLADIUM-DOPED SILICON
    MAMADALIMOV, AT
    MAKHMUDOV, K
    RAZIKOV, AK
    KHABIBULLAEV, PK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 228 - 229
12345