ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE DOPED WITH ISOVALENT IMPURITIES (GaAs:Sb, GaAs:In).

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作者：
Solov'eva, E.V.
Rytova, N.S.
Mil'vidskii, M.G.
Ganina, N.V.
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来源：
Soviet physics. Semiconductors | 1981年 / 15卷 / 11期
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：1243 / 1246
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