Influence of ion-implanted dopants in polysilicon gate on subthreshold characteristics of MOSFET

被引：0
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作者：
Tan, Yue [1 ]
Zhu, Chunxiang [1 ]
机构：
[1] Southeast Univ, Nanjing, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1998年 / 18卷 / 02期
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摘要：
7
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页码：188 / 193
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