Measurement of the Density Distribution of Impurities in the Near-Surface Region of a Semiconductor.

被引：0
|
作者：
Olenski, Jan
Marciniak, Wieslaw
机构：
来源：
Elektronika | 1973年 / 14卷 / 07期
关键词：
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
A nondestructive method to determine the density distribution of impurities is presented which is based on the unbalanced C-V characteristic in the structure considered. The theoretical principles are given, and application limits and errors discussed. The practical usefulness of the procedure is illustrated on wealkly-doped semiconductor near its surface.
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页码：282 / 286
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