High field transport of hot electrons in strained Si/SiGe heterostructure

被引：0
|
作者：
Miyatsuji, Kazuo
Ueda, Daisuke
Masaki, Kazuo
Yamakawa, Shinya
Hamaguchi, Chihiro
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1994年 / 33卷 / 4B期
关键词：
Electrons;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2378 / 2380
相关论文
共 50 条
  • [41] Nanoscale strained Si/SiGe heterojunction trigate field effect transistors
    Chang, S.-T. (stchang@cycu.edu.tw), 1600, Japan Society of Applied Physics (44):
  • [42] High field electron transport in modulation doped Si:SiGe quantum wells
    Thornton, TJ
    Matsumura, A
    Fernandez, J
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 445 - 448
  • [43] Conductivity of weakly and strongly localized electrons in a n-type Si/SiGe heterostructure
    Shlimak, I
    Ginodman, V
    Levin, M
    Potemski, M
    Maude, AK
    Gerber, A
    Milner, A
    Paul, DJ
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 1, NO 1, 2004, 1 (01): : 67 - 70
  • [44] Nanoscale strained Si/SiGe heterojunction trigate field effect transistors
    Chang, ST
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A): : 5304 - 5308
  • [45] High mobility CMOS transistors on Si/SiGe heterostructure channels
    Oh, Jungwoo
    Jeon, Kanghoon
    Lee, Se-Hoon
    Huang, Jeff
    Hung, P. Y.
    Ok, Injo
    Sassman, Barry
    Ko, Dae-Hong
    Kirsch, Paul
    Jammy, Raj
    MICROELECTRONIC ENGINEERING, 2012, 97 : 26 - 28
  • [46] Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure
    Zhang, Renhua
    Rozgonyi, George A.
    Yakimov, Eugene
    Yarykin, Nikolai
    Seacrist, Mike
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)
  • [47] Interdiffusion in strained Si/strained SiGe epitaxial heterostructures
    Xia, Guangrui
    Canonico, Michael
    Hoyt, Judy L.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (01) : S55 - S58
  • [48] High electron and hole mobility enhancements in thin-body strained Si/Strained SiGe/strained Si heterostructures on insulator
    Åberg, I
    Chléirigh, CN
    Olubuyide, OO
    Duan, X
    Hoyt, JL
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 173 - 176
  • [49] Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
    Pham, A. T.
    Jungemann, C.
    Klawitter, M.
    Meinerzhagen, B.
    SOLID-STATE ELECTRONICS, 2008, 52 (10) : 1660 - 1668
  • [50] Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
    Pham, A. T.
    Jungemann, C.
    Klawitter, M.
    Menerzhagen, B.
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 483 - +
12345