Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates

被引：0
|
作者：
Reindl, T. [1 ]
Kruehler, W. [1 ]
Pauli, M. [1 ]
Mueller, J. [1 ]
机构：
[1] Siemens AG, Munich, United States
来源：
Solar Energy Materials and Solar Cells | 1996年 / 41-42卷
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摘要：
11
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页码：127 / 135
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