Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates

被引：0
|
作者：
Reindl, T. [1 ]
Kruehler, W. [1 ]
Pauli, M. [1 ]
Mueller, J. [1 ]
机构：
[1] Siemens AG, Munich, United States
来源：
Solar Energy Materials and Solar Cells | 1996年 / 41-42卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：127 / 135
相关论文
共 50 条
  • [1] Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates
    Reindl, T
    Kruhler, W
    Pauli, M
    Muller, J
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 41-2 : 127 - 135
  • [2] Chemical composition and characterization of the Si/C interface in poly-Si thin films on graphite substrates
    Reindl, T
    Fuska, T
    Walz, C
    Cerva, H
    Lemme, R
    Weitzel, I
    Kruehler, W
    Pauli, M
    Mueller, J
    POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 295 - 300
  • [3] Electrical and structural properties of poly-Si films grown by furnace and rapid thermal annealing of amorphous Si
    Girginoudi, S
    Girginoudi, D
    Thanailakis, A
    Georgoulas, N
    Papaioannou, V
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 1968 - 1972
  • [4] Structural quality of smooth AIC poly-Si films on glass substrates
    Widenborg, PI
    Puzzer, T
    Stradal, J
    Neuhaus, DH
    Inns, D
    Straub, A
    Aberle, AG
    Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, : 1031 - 1034
  • [5] Electrical properties of thin PbTe films on Si substrates
    Ugai, YA
    Samoilov, AM
    Synorov, YV
    Yatsenko, OB
    INORGANIC MATERIALS, 2000, 36 (05) : 449 - 453
  • [6] Electrical properties of thin PbTe films on Si substrates
    Ya. A. Ugai
    A. M. Samoilov
    Yu. V. Synorov
    O. B. Yatsenko
    Inorganic Materials, 2000, 36 : 449 - 453
  • [7] Structural properties of poly-Si thin films grown on ZnO:Al coated glass substrates by aluminium induced crystallisation
    Dimova-Malinovska, D.
    Angelov, O.
    Kamenova, M.
    Vaseashta, A.
    Pivin, J. C.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (02): : 355 - 358
  • [8] Impedance study of the electrical properties of poly-Si thin film transistors
    Pereira, L.
    Raniero, L.
    Barquinha, P.
    Fortunato, E.
    Martins, R.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1737 - 1740
  • [9] Electrical characteristics of poly-Si TFT's with smooth surface roughness at oxide/poly-Si interface
    Min, BH
    Park, CM
    Han, MK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) : 2036 - 2038
  • [10] Thickness dependence of microstructure of laterally crystallized poly-Si thin films and electrical characteristics of low-temperature poly-Si TFTs
    Chang, TK
    Lin, CW
    Chang, YH
    Tseng, CH
    Chu, FT
    Cheng, HC
    Chou, LJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (08) : G494 - G497
12345