Dopant-dependent ion assisted etching kinetics in highly doped polysilicon reactive ion etching

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作者：
Sato, Masaaki [1 ]
机构：
[1] New Japan Radio Co, Ltd, Saitama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 9 A期
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页码：5039 / 5046
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