Persistent photoconductivity in doping-modulated a-Si:H multilayers

被引：0
|
作者：
Ito, Hiroshi [1 ]
Kikuchi, Minoru [1 ]
机构：
[1] Toshiba Corp, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1787 / 1792
相关论文
共 50 条
  • [41] Simulations of boron doping in a-Si:H
    Fedders, PA
    Drabold, DA
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 376 - 379
  • [42] Simulations of boron doping in a-Si:H
    Fedders, Peter A.
    Drabold, D.A.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 376 - 379
  • [43] Theory of boron doping in a-Si:H
    Fedders, PA
    Drabold, DA
    PHYSICAL REVIEW B, 1997, 56 (04): : 1864 - 1867
  • [44] Kinetics of the persistent photocurrent in a-Si:H
    Freitas, Ruben Jeronimo
    Shimakawa, Koichi
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2016, 30 (14):
  • [45] Thermalization gap of a-Si:H well layer in a-Si:H/a-Si3N4:H multilayers
    Murayama, K
    Katagiri, N
    Ouno, K
    Nakata, H
    Miyazaki, S
    Hirose, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 1072 - 1076
  • [46] INFLUENCE OF DOPING ON THE PHOTOCONDUCTIVITY OF A-SI-H
    KAZANSKII, AG
    SHAMONINA, EA
    SEMICONDUCTORS, 1993, 27 (10) : 932 - 934
  • [47] Contact limitation of secondary photoconductivity in intrinsic a-Si:H
    Kopidakis, N
    Tzanetakis, P
    Stradins, P
    Fritzsche, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 201 - 205
  • [48] 'IN SITU' MEASUREMENTS OF THE TRANSIENT PHOTOCONDUCTIVITY IN A-Si:H.
    Werner, A.
    Kunst, M.
    Beck, G.
    Lilie, J.
    Tributsch, H.
    1600, (56):
  • [49] EFFECTS OF BAND BENDING ON THE PHOTOCONDUCTIVITY IN a-Si:H.
    Jackson, Warren B.
    Thompson, Malcolm J.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 883 - 885
  • [50] CURRENT-VOLTAGE CHARACTERISTICS UNDER INPLANE CONDUCTION IN DOPING-MODULATED AMORPHOUS-SILICON MULTILAYERS
    OHEDA, H
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) : 5053 - 5058
12345