Properties of AlN films deposited on N-implanted Al

The mechanical and electrical properties of aluminum nitride (AlN) films deposited on N-implanted aluminum have been investigated. Prior to the deposition of AlN films, the Al substrates were implanted with 100 keV N2+ ions at different doses (1×1017-1×1018 ions/cm2). AlN films were prepared by rf ion plating on these N-implanted Al substrates. The adhesion of the films was evaluated by a scratch test, the microhardness measurement was made with load-penetration depth characteristics, and wear tests were performed without lubrication. The electrical resistivity was measured in terms of current-voltage characteristics. Furthermore, the change of crystalline structure was determine by X-ray diffraction, and the chemical composition and the depth profile were examined by Auger electron spectroscopy combined with Ar sputtering. It was found that adhesion, microhardness, wear and electrical resistivity were improved significantly when AlN films were deposited on N-implanted Al substrates, as compared to unimplanted Al substrates.