Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Reaction kinetics of SiO2 and ZnO-SiO2 sol-gel solutions
    Unger, Brita
    Popp, Peter
    Schade, Ulrich
    Hahnert, Manfred
    Journal of Non-Crystalline Solids, 1993, 160 (1-2): : 152 - 161
  • [32] SiC nanowires with thickness-controlled SiO2 shells: Fabrication, mechanism, reaction kinetics and photoluminescence properties
    Li, Zhenjiang
    Zhao, Jian
    Zhang, Meng
    Xia, Jiyin
    Meng, Alan
    NANO RESEARCH, 2014, 7 (04) : 462 - 472
  • [33] SIGMOIDAL KINETICS AS CAUSE FOR DIFFERENT PH-DEPENDENCE CURVES IN REACTION OF RIBONUCLEASE TI
    MULLER, R
    WITZEL, H
    HOPPE-SEYLERS ZEITSCHRIFT FUR PHYSIOLOGISCHE CHEMIE, 1972, 353 (05): : 737 - &
  • [34] PT/TI/SIO2/SI SUBSTRATES
    FOX, GR
    TROLIERMCKINSTRY, S
    KRUPANIDHI, SB
    CASAS, LM
    JOURNAL OF MATERIALS RESEARCH, 1995, 10 (06) : 1508 - 1515
  • [35] CoSi2 formation in the Ti/Co/SiO2/Si system
    Detavernier, C
    Van Meirhaeghe, RL
    Cardon, F
    Maex, K
    Bender, H
    Zhu, SY
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 133 - 140
  • [36] CoSi2 formation in the Ti/Co/SiO2/Si system
    1600, American Institute of Physics Inc. (88):
  • [37] KINETICS OF TI3+/TI+ ELECTRODE REACTION ON SMOOTH PLATINUM
    TOSHIMA, S
    OKANIWA, H
    NISHIJIM.M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY OF JAPAN, 1966, 34 (04): : 241 - &
  • [38] Differential scanning calorimetry and reaction kinetics studies of γ + α2 Ti aluminide
    Gupta, R. K.
    Pant, Bhanu
    Agarwala, Vijaya
    Sinha, P. P.
    MATERIALS CHEMISTRY AND PHYSICS, 2012, 137 (02) : 483 - 492
  • [39] Influence of interfacial copper on the Ti-SiO2 reaction during nitridation of Cu-Ti films
    Adams, D
    Alford, TL
    Theodore, ND
    Laursen, T
    Russell, SW
    Kim, MJ
    THERMODYNAMICS AND KINETICS OF PHASE TRANSFORMATIONS, 1996, 398 : 631 - 636
  • [40] STUDY ON OXYGEN BEHAVIOR DURING TI/SI AND TI/SIO2 INTERACTIONS
    LI, BZ
    ZHOU, SF
    HONG, F
    JIANG, GB
    LIU, P
    ZHANG, AM
    CHAO, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1714 - 1720
12345