TA-SI-C HIGH RESISTIVITY THIN FILMS FOR THERMAL PRINTING HEADS.

被引：0

作者：

Nakamori, Tomohiro ^{[1
]}

Tsuruoka, Taiji ^{[1
]}

Kanamori, Takashi ^{[1
]}

Shibata, Susumu ^{[1
]}

机构：

[1] Oki Electric Industry Co, Hachioji, Jpn, Oki Electric Industry Co, Hachioji, Jpn

来源：

IEEE transactions on components, hybrids, and manufacturing technology | 1986年 / CHMT-10卷 / 03期

关键词：

COMPUTER PERIPHERAL EQUIPMENT - Printers - FACSIMILE EQUIPMENT - TANTALUM AND ALLOYS - Thin Films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Ta-Si-C thin films have been developed for thermal printing heads, and the effect of composition on the film properties has been studied. The results show that: (1) when Ta-Si-C thin films are formed, the composition of the film does not agree with the target composition; (2) the addition of carbon to Ta/SiC mixtures suppresses recrystallization during high-temperature treatment; (3) excellent characteristics are achieved with thermal printing heads using Ta-Si-C thin films formed using a target with more than 20% carbon in a SiC/C mixture; and (4) irreversible resistance changes are very small in thermal printing heads containing more than 20% carbon when external heat is applied. These findings indicate that Ta-Si-C is an excellent material for use in thermal printing heads.

引用

页码：446 / 451

共 50 条

[31] Annealing effects in the electrical resistivity in AuCu/Si thin films
Maldonado, R. D.
Corona, J. E.
Oliva, A. I.
2006 3RD INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING, 2006, : 9 - +
[32] Thermal stability of thin amorphous Ta-Si-N films used in Au/GaN metallization
Kuchuk, A. V.
Klad'ko, V. P.
Machulin, V. F.
Piotrowska, A.
TECHNICAL PHYSICS, 2006, 51 (10) : 1383 - 1385
[33] Amorphous Metal Thin Films for Thermal Inkjet Printing
McGlone, John M.
Pommerenck, Jordan K.
Graham, Matt W.
Wager, John F.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2018, 27 (02) : 289 - 295
[34] Thermal stability of Ta-Si-N nanocomposite thin films at different nitrogen flow ratios
Chung, C. K.
Chen, T. S.
Peng, C. C.
Wu, B. H.
SURFACE & COATINGS TECHNOLOGY, 2006, 201 (07): : 3947 - 3952
[35] Thermal stability of thin amorphous Ta-Si-N films used in Au/GaN metallization
A. V. Kuchuk
V. P. Klad’ko
V. F. Machulin
A. Piotrowska
Technical Physics, 2006, 51 : 1383 - 1385
[36] Retardation of Ta silicidation by bias sputtering in Cu/Ta/Si(111) thin films
Moshfegh, AZ
Akhavan, O
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (14) : 2103 - 2108
[37] Fabrication of Ta-Si-C targets and their utilization for deposition of low friction wear resistant nanocomposite Si-Ta-C-(N) coatings intended for wide temperature range tribological applications
Bondarev, A. V.
Vorotilo, S.
Shchetinin, I. V.
Levashov, E. A.
Shtansky, D. V.
SURFACE & COATINGS TECHNOLOGY, 2019, 359 : 342 - 353
[38] Low-temperature resistivity and microstructure of reactive magnetron co-sputtered Ta-Si-N thin films
Chung, C. K.
Nautiyal, A.
Chen, T. S.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (29)
[39] Failure Mechanism of 5 nm Thick Ta-Si-C Barrier Layers Against Cu Penetration at 750-800°C
Fang, Jau-Shiung
Chiu, Chin-Fu
Lin, Jia-Huei
Lin, Ting-Yi
Chin, Tsung-Shune
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (02) : H147 - H152
[40] High moment FeTiN thin films for high density recording heads
Byeon, SC
Ding, YF
Alexander, C
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) : 2502 - 2505

← 1 2 3 4 5 →