NEW MOS PHOTON-COUNTING SENSOR OPERATING IN THE ABOVE-BREAKDOWN REGIME.

被引：0

作者：

Lester, T.P. ^{[1
]}

Pulfrey, D.L. ^{[1
]}

机构：

[1] Univ of British Columbia, Dep of, Electrical Engineering, Vancouver,, BC, Can, Univ of British Columbia, Dep of Electrical Engineering, Vancouver, BC, Can

来源：

IEEE Transactions on Electron Devices | 1984年 / ED-31卷 / 10期

关键词：

ABOVE-BREAKDOWN REGIME - PHOTON-COUNTING SENSOR - SELF-SCANNED CCD ARRAY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A solid-state optical sensor based on a buried-channel charge-transfer MOS structure and operated at voltages in the above-breakdown regime is proposed. In this mode of operation the MOS photosensor performs as a photon counter with, it is suggested, two significant advantages over similar sensors based on p-n junction diodes, namely: self-quenching of the avalanche discharge and possible implementation in the form of a self-scanned CCD array. In this first demonstration of the proposed device, discrete structures in silicon are investigated experimentally.

引用

页码：1420 / 1427

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