共 50 条
- [31] Simulation of boron diffusion in high-dose BF2 implanted silicon JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1608 - 1611
- [32] PULSED ELECTRON-BEAM ANNEALING OF HIGH-DOSE ARSENIC IMPLANTED SILICON APPLIED PHYSICS, 1980, 22 (04): : 385 - 388
- [35] PLASTIC-DEFORMATION EFFECT IN HIGH-DOSE ION-IMPLANTED SYSTEMS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (03): : 369 - 374
- [36] DYNAMIC DISORDERING PROCESS IN SI DURING HIGH-DOSE RATE B+ ION-BEAM IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4): : 772 - 775
- [37] SILICIDE STRUCTURAL EVOLUTION IN HIGH-DOSE COBALT-IMPLANTED SI(100) CRYSTALS PHYSICAL REVIEW B, 1989, 40 (09): : 6368 - 6373
- [38] THE STUDY OF SI0.5GE0.5 ALLOY IMPLANTED BY HIGH-DOSE OXYGEN NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 691 - 696
- [39] High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+ 20TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES, 2017, 2018, 992