Determination of the lattice contraction of boron-doped silicon

被引:0
|
作者
机构
来源
| 1600年 / 73期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [21] INFRARED ABSORPTION LINES IN BORON-DOPED SILICON
    COLBOW, K
    CANADIAN JOURNAL OF PHYSICS, 1963, 41 (11) : 1801 - &
  • [22] OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED SILICON
    GUPTA, S
    MESSOLORAS, S
    SCHNEIDER, JR
    STEWART, RJ
    ZULEHNER, W
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1991, 24 (pt 5) : 576 - 580
  • [23] Mechanism of iron gettering in boron-doped silicon
    Stolk, P.A.
    Benton, J.L.
    Eaglesham, D.J.
    Jacobson, D.C.
    Cheng, J.-Y.
    Poate, J.M.
    Myers, S.M.
    Haynes, T.E.
    Applied Physics Letters, 1996, 68 (01):
  • [24] DEGENERACY OF IMPURITY STATES IN BORON-DOPED SILICON
    SKOCZYLA.MW
    WHITE, JJ
    CANADIAN JOURNAL OF PHYSICS, 1965, 43 (07) : 1388 - &
  • [25] PHOTOELECTROCHEMICAL PROPERTIES OF BORON-DOPED SILICON ELECTRODE
    GORODYSKY, AV
    KOLBASOV, GY
    TARANENKO, NI
    LIPYAVKA, VG
    DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA B-GEOLOGICHNI KHIMICHNI TA BIOLOGICHNI NAUKI, 1987, (04): : 44 - 47
  • [26] Extremely large magnetoresistance in boron-doped silicon
    Schoonus, J. J. H. M.
    Bloom, F. L.
    Wagemans, W.
    Swagten, H. J. M.
    Koopmans, B.
    PHYSICAL REVIEW LETTERS, 2008, 100 (12)
  • [27] POINT RADIATION DEFECTS IN BORON-DOPED SILICON
    EMTSEV, VV
    MASHOVETS, TV
    NAZARYAN, EK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 587 - 589
  • [28] Diffusion of gold into heavily boron-doped silicon
    Bracht, H
    Schachtrup, AR
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 25 - 36
  • [29] DIFFUSION OF PHOSPHORUS IN ARSENIC AND BORON-DOPED SILICON
    WITTEL, F
    DUNHAM, S
    APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1415 - 1417
  • [30] QUENCHED-IN DEFECT IN BORON-DOPED SILICON
    GERSON, JD
    CHENG, LJ
    CORBETT, JW
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822