共 50 条
- [25] PHOTOELECTROCHEMICAL PROPERTIES OF BORON-DOPED SILICON ELECTRODE DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA B-GEOLOGICHNI KHIMICHNI TA BIOLOGICHNI NAUKI, 1987, (04): : 44 - 47
- [27] POINT RADIATION DEFECTS IN BORON-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 587 - 589
- [28] Diffusion of gold into heavily boron-doped silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 25 - 36
- [30] QUENCHED-IN DEFECT IN BORON-DOPED SILICON JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822