Electric properties of vacuum-evaporated polycrystalline thin SnO2-layers

被引：0
|
作者：
Hallmann, L. [1 ]
机构：
[1] Christion-Albrechts-Universität, Kiel, Germany
来源：
Keramische Zeitschrift | 2000年 / 52卷 / 02期
关键词：
Doping (additives) - Electric conductivity of solids - Electric resistance - Evaporation - Partial pressure - Polycrystalline materials - Pressure effects - Thermal effects - Thin films - Tin compounds - Vacuum applications;
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摘要：
An undoped and doped tin oxide layer has been applied on a glassy surface by vacuum evaporation and their photoelectrochemical properties have been studied. Fe2O3, Sb2O3 and Sb2O5, have been used as dopants. The electrical conductivity of the ceramic polycrystalline SnO2 as a function of the temperature and the oxygen partial pressure was investigated. Polycrystalline SnO2 in an insulator, the undoped and doped thin layers developed by vacuum evaporation have also high electric resistance.
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页码：136 / 139
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