DEFECT DENSITIES IN INTEGRATED CIRCUITS.

被引：0
|
作者：
Meehan, M.J.
机构：
来源：
RCA Engineer | 1979年 / 24卷 / 06期
关键词：
DEFECT DENSITY;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Defect density is an expression commonly used to describe the density of defective sites on an integrated circuit as a result of wafer processing. This paper presents a mathematical model which sets some guidelines to help maximize integrated-circuit yields. The model assumes the defects are random; the calculated yield predictions are close approximations of actual results.
引用
收藏
页码：21 / 25
相关论文
共 50 条
  • [41] INTRODUCTION TO SEMI-CUSTOM INTEGRATED CIRCUITS.
    Dhawan, Satish K.
    IEEE Transactions on Nuclear Science, 1985, NS-33 (01)
  • [42] OPTICAL WAVEGUIDE LENSES, SWITCHES AND INTEGRATED CIRCUITS.
    Nishihara, Hiroshi
    Haruna, Masamitsu
    Suhara, Toshiaki
    1600, (05):
  • [43] SYSTEM FOR THE AUTOMATED DESIGN OF COMPLEX INTEGRATED CIRCUITS.
    Heath, A.E.
    Lydick, Richard
    RCA Engineer, 1980, 26 (02): : 42 - 45
  • [44] CHEMICAL VAPOR DEPOSITION FOR PASSIVATION OF INTEGRATED CIRCUITS.
    Kennedy, Bobby W.
    Insulation, circuits, 1981, 27 (10): : 78 - 81
  • [45] SIGNAL DELAY CALCULATION FOR INTEGRATED CMOS CIRCUITS.
    Huss, Sorin A.
    Gerbershagen, Martin
    AEU. Archiv fur Elektronik und Ubertragungstechnik, 1987, 41 (04): : 214 - 222
  • [46] On an Interactive Optimization Method for the Design of Integrated Circuits.
    Leibner, Peter
    AEU. Archiv fur Elektronik und Ubertragungstechnik, 1986, 40 (01): : 1 - 9
  • [47] Physical Method of Estimating the Reliability of Integrated Circuits.
    Kostychev, G.I.
    Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1974, 17 (05): : 86 - 90
  • [48] DEVICE MODELING FOR SUBMICRON FET INTEGRATED CIRCUITS.
    Chatterjee, Pallab K.
    1600, (CHMT-5):
  • [49] EVALUATION OF METHODS FOR PASSIVATING SILICON INTEGRATED CIRCUITS.
    Jones Jr., R.E.
    1600, (18):
  • [50] Analytical Noise Estimation in Linear Integrated Circuits.
    Brodic, T.
    1600, (27):
12345