共 50 条
- [1] EFFECTS OF ANNEALING ON THE STRUCTURAL-PROPERTIES OF GAAS ON SI(100) GROWN AT A LOW-TEMPERATURE BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (04): : L540 - L543
- [2] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 626 - 631
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- [4] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY - COMMENTS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4754 - 4755
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- [6] INITIAL GROWTH-CONDITIONS OF GAAS ON (100)SI GROWN BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (03): : L283 - L286
- [7] IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1877 - L1879
- [8] Impurity doping effect on the dislocation density in GaAs on Si(100) grown by migration-enhanced epitaxy Nozawa, Kazuhiko, 1600, (28):
- [10] STRUCTURAL-PROPERTIES OF (GAAS)1-X(SI2)X LAYERS ON GAAS(100) SUBSTRATES GROWN BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (4A): : L547 - L550