GROWING PERFECT VARIZONAL LAYERS OF AlxGa1 - xAs WITH A BAND GAP INCREASING TOWARD THE SURFACE.

被引：0
|
作者：
Gaponenko, V.N.
Lunin, L.S.
Lunina, O.D.
机构：
来源：
Neorganiceskie materialy | 1987年 / 23卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICES
引用
收藏
页码：1247 / 1250
相关论文
共 50 条
  • [41] Precise Determination of the Direct-Indirect Band Gap Energy Crossover Composition in AlxGa1-xAs
    Beaton, Daniel A.
    Alberi, Kirstin
    Fluegel, Brian
    Mascarenhas, Angelo
    Reno, John L.
    APPLIED PHYSICS EXPRESS, 2013, 6 (07)
  • [42] Behavior of exciton in direct-indirect band gap AlxGa1-xAs crystal lattice quantum wells
    Yong Sun
    Wei Zhang
    Shuang Han
    Ran An
    Xin-Sheng Tang
    Xin-Lei Yu
    Xiu-Juan Miao
    Xin-Jun Ma
    Xianglian
    Pei-Fang Li
    Cui-Lan Zhao
    Zhao-Hua Ding
    Jing-Lin Xiao
    Journal of Semiconductors, 2024, 45 (03) : 76 - 83
  • [43] Optical absorption and band gap shift of n-doped AlxGa1-xAs alloys grown by MBE
    Ferreira, Da Silva, A.
    Persson, C.
    Berggren, K.-F.
    Pepe, I.
    Santos, Alves, A.
    De, Oliveira, A.G.
    Microelectronic Engineering, 1998, 43-44 : 423 - 429
  • [44] Low temperature photoluminescence study in AlxGa1-xAs alloys in the indirect band gap region (x>0.4)
    Centro de Investigacion y de, Estudios Avanzados, Coah, Mexico
    J Appl Phys, 8 (5090-5097):
  • [45] THEORETICAL-ANALYSIS OF ALXGA1-XAS-GAAS GRADED BAND-GAP SOLAR-CELL
    HUTCHBY, JA
    FUDURICH, RL
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3140 - 3151
  • [46] The effect of a graded band gap window on the performance of a single junction AlxGa1-xAs/GaAs Solar Cell
    Fathipour, Morteza
    Elahidoost, Atousa
    Mojab, Alireza
    Fathipour, Vala
    World Academy of Science, Engineering and Technology, 2010, 69 : 480 - 483
  • [47] PRESSURE COEFFICIENT OF THE DIRECT BAND-GAP OF ALXGA1-XAS FROM OPTICAL-ABSORPTION MEASUREMENTS
    LIFSHITZ, N
    JAYARAMAN, A
    LOGAN, RA
    MAINES, RG
    PHYSICAL REVIEW B, 1979, 20 (06): : 2398 - 2400
  • [48] BAND-GAP ENGINEERING OF ALXGA1-XAS DEVICE STRUCTURES BY ELECTRON-BEAM SOURCE MBE
    MALIK, RJ
    LEVINE, BF
    MILLER, RC
    LEVI, AFJ
    LANG, DV
    HOPKINS, LC
    RYAN, RW
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A16 - A16
  • [49] Optical absorption and band gap shift of n-doped AlxGa1-xAs alloys grown by MBE
    da Silva, AF
    Persson, C
    Berggren, KF
    Pepe, I
    Alves, AS
    de Oliveira, AG
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 423 - 429
  • [50] Magnetic field stabilized electron-hole liquid in indirect-band-gap AlxGa1-xAs
    Alberi, K.
    Fluegel, B.
    Crooker, S. A.
    Mascarenhas, A.
    PHYSICAL REVIEW B, 2016, 93 (07)
12345