The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition

被引：0
|
作者：
Leem, Shi-Jong [1 ,2 ]
Kim, Min Hong [1 ]
Shin, Johngoen [1 ]
Choi, Yoonho [1 ]
Jeong, Jichai [3 ]
机构：
[1] Optoelectronics Group, LG Electronics Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724, Korea, Republic of
[2] Department of Electronics Engineering, Korea University, 1, 5-ka, Anam-Dong, Sungbuk-Gu, Seoul 136-701, Korea, Republic of
[3] Department of Radio Engineering, Korea University, 1, 5-ka, Anam-Dong, Sungbuk-Gu, Seoul 136-701, Korea, Republic of
来源：
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
Double crystal x-ray diffraction (DCXRD) - Growth interruption;
D O I：
10.1143/jjap.40.l371
中图分类号：
学科分类号：
摘要：
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