Control of microscratches in chemical-mechanical polishing process for shallow trench isolation

被引：0
|
作者：
Samsung Electronics Co, Ltd, Kyongki-do, Korea, Republic of [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 11卷 / 5849-5853期
关键词：
Chemical polishing - pH effects - Potassium compounds - Slurries;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method of controlling microscratches on silicon oxide surfaces induced by chemical-mechanical polishing (CMP) process for the planarization of shallow trench isolation is discussed. The frequency of microscratches during polishing shows its high dependency on the characteristics of CMP consumables such as slurry and pad. A diluted slurry solution, pH-controlled with a potassium hydroxide (KOH) solution of pH 13, produces best results in reducing microscratches on silicon oxide surfaces during polishing. In conclusion, careful preparation of the CMP consumables is required to reduce microscratches on silicon oxide during polishing.
引用
收藏
相关论文
共 50 条
  • [11] Nanotopography effects on chemical mechanical polishing for shallow trench isolation
    Lee, B
    Gan, T
    Boning, D
    Hester, P
    Poduje, N
    Baylies, W
    2000 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, 2000, : 425 - 432
  • [12] Defect detection strategies for chemical mechanical polishing process in shallow trench isolation applications
    Li, JJ
    Liu, AH
    Hiemke, SS
    IN-LINE METHODS AND MONITORS FOR PROCESS AND YIELD IMPROVEMENT, 1999, 3884 : 36 - 43
  • [13] A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
    Lin, CF
    Tseng, WT
    Feng, MS
    Wang, YL
    THIN SOLID FILMS, 1999, 347 (1-2) : 248 - 252
  • [14] Mechanism of chemical mechanical polishing process for oxide-filled shallow trench isolation applications
    Prasad, J
    Misra, A
    Sees, J
    Morrison, B
    Hall, L
    CHEMICAL MECHANICAL PLANARIZATION I: PROCEEDINGS OF THE FIRST INTERNATIONAL SYMPOSIUM ON CHEMICAL MECHANICAL PLANARIZATION, 1997, 96 (22): : 36 - 46
  • [15] CHEMICAL-MECHANICAL POLISHING - PROCESS MANUFACTURABILITY
    JAIRATH, R
    FARKAS, J
    HUANG, CK
    STELL, M
    TZENG, SM
    SOLID STATE TECHNOLOGY, 1994, 37 (07) : 71 - &
  • [16] Modeling of reverse tone etchback shallow trench isolation chemical mechanical polishing
    Gan, T
    Tugbawa, T
    Lee, B
    Boning, DS
    Jang, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (03) : G159 - G165
  • [17] Chemical mechanical polishing defect reduction via a plasma etch in the 0.15 μm shallow trench isolation process
    Chiu, CM
    Yen, TF
    Chiu, KF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03): : 960 - 965
  • [18] Study of chemical mechanical polishing on shallow trench isolation (STI) to obtain low defect
    Baek, MK
    Kim, SY
    Kim, CI
    Chang, EG
    PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, 1999, 99 (02): : 215 - 219
  • [19] RBR control applied on chemical-mechanical polishing process in ULSI manufacturing
    Li, Xiujuan
    Jin, Zhuji
    Kang, Renke
    Guo, Dongming
    Su, Jianxiu
    Jingangshi yu Moliao Moju Gongcheng/Diamond and Abrasives Engineering, 2006, (02): : 61 - 64
  • [20] A few thoughts on the alleviation of dishing and erosion during chemical-mechanical planarization for shallow trench isolation
    Tseng, WT
    Niu, J
    CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 71 - 79
12345