Amorphous silicon solar cell computer model incorporating the effects of TCO/a-Si:C:H junction

被引：0
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作者：
Smole, Franc [1 ]
Topic, Marko [1 ]
Furlan, Joze [1 ]
机构：
[1] Univ of Ljubljana, Trzaska, Slovenia
来源：
Solar Energy Materials and Solar Cells | 1994年 / 34卷 / 1 -4 pt 1期
关键词：
Band bending - Surface density of states - Transparent conductive oxide (TCO);
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页码：385 / 392
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