Interband tunneling mechanisms and effects of AlSb center-barrier layer on light particle coupling and reverse I-V characteristics of GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structures

被引：0
|
作者：
机构：
[1] Liu, Meng Hwang
[2] Wang, Yeong Her
[3] Houng, Mau Phon
来源：
Liu, Meng Hwang | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
Semiconductor device structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 38 条
  • [21] THE INFLUENCE OF INAS WELL THICKNESS ON THE NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIORS IN GASB/ALSB/INAS/GASB/ALSB/INAS DOUBLE BARRIER STRUCTURES
    HOUNG, MP
    WANG, YH
    SHEN, CL
    LIU, MH
    CHEN, JF
    CHO, AY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 1048 - 1050
  • [22] THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE
    CHEN, JF
    CHO, AY
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4432 - 4435
  • [23] Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interband-tunneling structures
    Wagner, J.
    Schmitz, J.
    Obloh, H.
    Koidl, P.
    Applied Physics Letters, 1995, 67 (20):
  • [24] RESONANT INTERBAND AND INTRABAND TUNNELING IN INAS/ALSB/GASB DOUBLE-BARRIER DIODES
    HUBER, JL
    REED, MA
    KRAMER, G
    ADAMS, M
    FERNANDO, CJL
    FRENSLEY, WR
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 203 - 208
  • [25] INTERBAND RESONANT TUNNELING IN INAS/ALSB/GASB SYMMETRICAL POLYTYPE STRUCTURES
    KILEDJIAN, MS
    SCHULMAN, JN
    WANG, KL
    ROUSSEAU, KV
    PHYSICAL REVIEW B, 1992, 46 (24): : 16012 - 16017
  • [26] COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF ALSB(AS) TUNNELING BARRIERS IN INAS/ALSB(AS)/GASB RESONANT INTERBAND-TUNNELING STRUCTURES
    WAGNER, J
    SCHMITZ, J
    OBLOH, H
    KOIDL, P
    APPLIED PHYSICS LETTERS, 1995, 67 (20) : 2963 - 2965
  • [27] MECHANISMS OF VALLEY CURRENTS IN INAS/ALSB/GASB RESONANT INTERBAND TUNNELING DIODES
    SHEN, J
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) : 6220 - 6223
  • [28] Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes
    Shen, Jun
    Journal of Applied Physics, 1995, 78 (10):
  • [29] InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure
    Nie, Biying
    Huang, Jianliang
    Zhao, Chengcheng
    Huang, Wenjun
    Zhang, Yanhua
    Cao, Yulian
    Ma, Wenquan
    APPLIED PHYSICS LETTERS, 2019, 114 (05)
  • [30] HOLE AND INTERBAND RESONANT TUNNELING IN GAAS/GAALAS AND INAS/GASB/ALSB TUNNEL STRUCTURES
    KILEDJIAN, MS
    SCHULMAN, JN
    WANG, KL
    ROUSSEAU, KV
    SURFACE SCIENCE, 1992, 267 (1-3) : 405 - 408
1234