STRUCTURE AND PROPERTIES OF ION-IMPLANTATION-DOPED p-n JUNCTIONS IN SiC.

A study was made of capacitance-voltage and current-voltage characteristics of p-n junctions prepared by the implantation of 90 keV Al** plus ions in n-type SiC with a net donor concentration N//D minus N//A equals (1-20) multiplied by 10**1**7 cm** minus **3. The ion dose was in the range PHI equals 3 multiplied by 10**1**5-3 multiplied by 10**1**7 cm** minus **2, the annealing temperature was T equals 1500-1950 degree C, and the annealing period was t equals 5-180 sec. An analysis of the capacitance-voltage characteristics indicated that implantation, which ensured formation of a p-type layer, produced a p-n junction with a nonabrupt profile because of radiation-stimulated diffusion. Pulsed current-voltage characteristics were investigated up to current densities of approximately 10 kA/cm**2 at temperatures of 20-250 degree C.