Scanning tunneling spectroscopy of Mott-Hubbard states on the 6H-SiC(0001) root3 × root3 surface

被引：0
|
作者：
Ramachandran, V.
Feenstra, R.M.
机构：
来源：
Physical Review Letters | 1999年 / 82卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] 3C-SiC Growth on 6H-SiC (0001) substrates
    Matko, I
    Chenevier, B
    Audier, M
    Madar, R
    Diani, M
    Simon, L
    Kubler, L
    Aubel, D
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 315 - 318
  • [42] Silver-induced 3 x 3 phase on 6H-SiC(0001) √3 x √3 surface
    Kubo, O
    Harada, T
    Kobayashi, T
    Ryu, JT
    Katayama, M
    Oura, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4343 - 4346
  • [43] The SiC(0001)6 root x6 root 3 reconstruction studied with STM and LEED
    Owman, F
    Martensson, P
    SURFACE SCIENCE, 1996, 369 (1-3) : 126 - 136
  • [44] Fullerene (C-60) adsorption and films growth on the (root 3x root 3) and (3x3) surface of 6H SiC(0001)
    Li, L
    Hasegawa, Y
    Shinohara, H
    Sakurai, T
    JOURNAL DE PHYSIQUE IV, 1996, 6 (C5): : 173 - 177
  • [45] Can hydrogen stabilize the alpha-SiC(0001)root 3x root 3 surface?
    Badziag, P
    SURFACE SCIENCE, 1996, 352 : 396 - 400
  • [46] Theory of the adatom-induced reconstruction of the SiC(0001)root 3x root 3 surface
    Northrup, JE
    Neugebauer, J
    PHYSICAL REVIEW B, 1995, 52 (24): : 17001 - 17004
  • [47] Reaction of palladium thin films with an Si-rich 6H-SiC(0001) (3×3) surface
    Veuillen, J.Y.
    Nguyen Tan, T.A.
    Tsiaoussis, I.
    Frangis, N.
    Brunel, M.
    Gunnella, R.
    Diamond and Related Materials, 1999, 8 (02): : 352 - 356
  • [48] Study on (√3 x √3)R30° reconstruction of 6H-SiC(0001) surface by Atleed
    Deng, BC
    Chen, Y
    Xu, G
    Chen, WH
    He, YJ
    Xie, MH
    Tang, SX
    ACTA PHYSICA SINICA, 2001, 50 (01) : 106 - 110
  • [49] Initial oxidation of the Si-terminated 6H-SiC(0001) 3x3 surface
    Amy, F
    Hwu, YK
    Brylinski, C
    Soukiassian, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 395 - 398
  • [50] Adsorbate effects of the surface structure of 6H-SiC(0001) √3 x √3-R30°
    Aoyama, T
    Hisada, Y
    Mukainakano, S
    Ichimiya, A
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 705 - 708
12345