Scanning tunneling spectroscopy of Mott-Hubbard states on the 6H-SiC(0001) root3 × root3 surface

被引:0
|
作者
Ramachandran, V.
Feenstra, R.M.
机构
来源
Physical Review Letters | 1999年 / 82卷 / 05期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Scanning tunneling spectroscopy of Mott-Hubbard states on the 6H-SiC(0001)√3x√3 surface
    Ramachandran, V
    Feenstra, RM
    PHYSICAL REVIEW LETTERS, 1999, 82 (05) : 1000 - 1003
  • [3] Surface structure of ( root3 × root3)R30° and (5 root3 × 2) phases of S/Ni(111)
    Kitajima, Y.
    Yagi, S.
    Yokoyama, T.
    Imanishi, A.
    Takenaka, S.
    Ohta, T.
    Physica B: Condensed Matter, 1995, 208-209 (1-4):
  • [4] Scanning tunneling spectroscopy on the 6H-SiC(0001)(3 x 3) surface
    Gasparov, VA
    Riehl-Chudoba, M
    Schröter, B
    Richter, W
    EUROPHYSICS LETTERS, 2000, 51 (05): : 527 - 533
  • [5] Investigation of the Si(111) ( root3× root3)R30°-boron surface reconstruction by simulated annealing
    Wong, Yat-Ting
    Schubert, Boris
    Hoffmann, Roald
    Journal of the American Chemical Society, 1992, 114 (07):
  • [6] Scanning tunneling microscopy and low energy electron diffraction study of the formation of a root3× root3 R30° reconstruction on the hydrogen etched Si(111) 1×1 surface
    Rogers, D.
    Tiedje, T.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (05):
  • [7] U parameter of the Mott-Hubbard insulator 6H-SiC(0001)-(√3 x √3)R30°:: An ab initio calculation
    Rohlfing, M
    Pollmann, J
    PHYSICAL REVIEW LETTERS, 2000, 84 (01) : 135 - 138
  • [8] Unoccupied surface state on the (root 3x root 3) R30 degrees reconstruction of 6H-SiC(0001)
    Themlin, JM
    Forbeaux, I
    Langlais, V
    Belkhir, H
    Debever, JM
    EUROPHYSICS LETTERS, 1997, 39 (01): : 61 - 66
  • [9] Photoemission study on the 6H-SiC(0001) 3 × 3 surface
    Ihm, Kyuwook
    Cho, Eun-Sang
    Hwang, Chan-Cuk
    Kang, Tai-Hee
    Jeon, Cheol-Ho
    Kim, Ki-Jeong
    Kim, Bongsoo
    Park, Chong-Yun
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (5 A): : 2605 - 2608
  • [10] Surface reconstructions of 6H-SiC(0001) studied with scanning tunneling microscopy and core-level photoelectron spectroscopy
    Owman, F
    Johansson, LI
    Martensson, P
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 477 - 480