Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells

被引：0

作者：

Lüerssen, D. ^{[1
]}

Bleher, R. ^{[1
]}

Kalt, H. ^{[1
]}

Richter, H. ^{[1
]}

Schimmel, Th. ^{[1
]}

Rosenauer, A. ^{[2
]}

Litvinov, D. ^{[2
]}

Kamilli, A. ^{[2
]}

Gerthsen, D. ^{[2
]}

Johst, B. ^{[3
]}

Ohkawa, K. ^{[3
]}

Hommel, D. ^{[3
]}

机构：

[1] Institut für Angewandte Physik, Universität Karlsruhe, D-76128 Karlsruhe, Germany

[2] Lab. für Elektronenmikroskopie, Universität Karlsruhe, D-76128 Karlsruhe, Germany

[3] Inst. für Festkörperphysik, Universität Bremen, D-28334 Bremen, Germany

来源：

| 2000年 / Wiley-VCH Verlag Berlin GmbH, Weinheim, Germany卷 / 178期

关键词：

Atomic force microscopy - Excitons - Photoluminescence - Semiconducting selenium compounds - Semiconducting zinc compounds - Semiconductor device structures - Semiconductor quantum dots - Stacking faults - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Pairs of bright spots aligned parallel to the cleaved sample edges are observed in micro-photoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. Structural characterization by atomic-force microscopy, plan-view and cross-section transmission electron microscopy reveal that the enhanced radiative recombination is induced by pairs of stacking faults intersecting the quantum wells. In the case of Frank-type stacking faults the wells are enlarged by up to 12 bilayers leading to an efficient exciton localization. This localization is much shallower in the case of Shockley-type stacking-fault pairs.

引用

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[1] Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells
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