共 50 条
- [35] Surface defects in GaN and AlxGa1-xN epilayers deposited on sapphire by organometallic vapor phase epitaxy Mater Sci Forum, pt 2 (1251-1254):
- [36] Metal-organic hydride vapor phase epitaxy of AlxGa1-xN films over sapphire JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32): : L752 - L754
- [37] Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
- [38] Surface defects in GaN and AlxGa1-xN epilayers deposited on sapphire by organometallic vapor phase epitaxy SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1251 - 1254
- [40] Compositional fluctuations in AlxGa1-xN layers grown on 6H-SiC (0001) by metal organic vapor phase epitaxy GAN AND RELATED ALLOYS-2002, 2003, 743 : 255 - 260