ON THE GROWTH MODE OF OXIDE FILMS ON CLEAVED GaAs(110) SURFACES AT ROOM TEMPERATURE.

被引：0
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作者：
Bartels, F. [1 ]
Moench, W. [1 ]
机构：
[1] Univ Duisburg, Duisburg, West Ger, Univ Duisburg, Duisburg, West Ger
来源：
Solid State Communications | 1986年 / 57卷 / 08期
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：571 / 574
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