Determination of built-in electric field strength in InP/n+-InP structures using photoellipsometry

被引：0
|
作者：
Tokyo Univ of Agriculture and, Technology, Tokyo, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 3卷 / 1696-1700期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] EFFECT OF BAND-GAP NARROWING ON THE BUILT-IN ELECTRIC-FIELD IN N-TYPE SILICON
    GEIST, J
    LOWNEY, JR
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1121 - 1123
  • [32] The effect of embedded nanopillars on the built-in electric field of amorphous silicon p-i-n devices
    Kirkpatrick, T.
    Simmons, C. B.
    Akey, A. J.
    Tabet, N.
    Buonassisi, T.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (19)
  • [33] DETERMINATION OF BUILT-IN ELECTRIC-FIELDS IN DELTA-DOPED GAAS STRUCTURES BY PHASE-SENSITIVE PHOTOREFLECTANCE
    ALPEROVICH, VL
    JAROSHEVICH, AS
    SCHEIBLER, HE
    TGEREKHOV, AS
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 657 - 660
  • [34] Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures
    Yildirim, Hasan
    PHYSICS LETTERS A, 2019, 383 (12) : 1324 - 1329
  • [35] DETERMINATION OF P-N-JUNCTIONS IN INP/GAINASP LASER HETEROSTRUCTURES USING A PROFILOMETER
    WALACHOVA, J
    NOHAVICA, D
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 79 (01): : K69 - K72
  • [36] Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures
    Reddy, M. Siva Pratap
    Kang, Hee-Sung
    Kim, Dong-Seok
    Jo, Young-Woo
    Won, Chul-Ho
    Kim, Ryun-Hwi
    Jang, Kyu-Il
    Chandrashekhar, C. H.
    Lee, Jung-Hee
    Reddy, V. Rajagopal
    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 69 - 72
  • [37] ELECTRIC AND PHOTOELECTRIC PROPERTIES OF SCHOTTKY BARRIERS IN AL-N-GAAS/N-INGAASP/I-INP STRUCTURES
    DVORYANKINA, GG
    TELEGIN, AA
    DVORYANKIN, VF
    PETROV, AG
    KYARGINSKAYA, LG
    USHAKOV, NM
    AVERIN, SV
    VYDUTS, VE
    PETROSYAN, VI
    ELENKRIG, BB
    SOVIET MICROELECTRONICS, 1989, 18 (05): : 235 - 238
  • [38] THE EFFECTS OF BUILT-IN ELECTRIC-FIELD ON THE PERFORMANCE OF COMPOSITIONALLY GRADED P-ON-N HGCDTE HETEROJUNCTION PHOTODIODES
    ROSENFELD, D
    GARBER, V
    BAHIR, G
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 925 - 933
  • [39] Critical built-in electric field for an optimum carrier collection in multiquantum well p-i-n diodes
    Serdiukova, I
    Monier, C
    Vilela, MF
    Freundlich, A
    APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2812 - 2814
  • [40] ELECTRIC FIELD-INDUCED QUASI-ELASTIC INTER-LANDAU LEVEL SCATTERING IN THE SPACE-CHARGE-LIMITED MAGNETOCONDUCTIVITY OF N+N-N+ INP STRUCTURES
    PAYLING, CA
    GUIMARAES, PSS
    EAVES, L
    SNELL, BR
    PORTAL, JC
    DIFORTEPOISSON, MA
    BRYLINSKI, C
    HILL, G
    PATE, MA
    SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) : 415 - 419
12345