共 50 条
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- [2] Implantation isolation in n-type InP bombarded with He+ and B+ (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 294-297, 1995) ION BEAM MODIFICATION OF MATERIALS, 1996, : 294 - 297
- [5] High resistivity in n-type InP by He+ bombardment at 300 and 60 K Solid State Electron, 1 (75-81):
- [6] Comparison of two different isolation schemes for n-type InP by helium implantation EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2002, : 160 - 165
- [8] Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 188 : 205 - 209