INFLUENCE OF DISLOCATIONS ON ACCUMULATION OF RADIATION DEFECTS IN SILICON.

An investigation was made of the influence of dislocations generated by plastic deformation on the formation of radiation defects in n-type silicon irradiated with **6**0Co gamma rays at temperatures less than equivalent to 50 degree C. The temperature dependences of the Hall coefficient and electrical conductivity were determined. It is shown that the rate of introduction of the main radiation defects decreased and the degree of degradation of the Hall mobility increased on increase in the dislocation density. The results are interpreted on the assumption that dislocations acted as sinks for primary radiation defects.